Degradation and recovery property of Schottky Barrier height of AlGaN/GaN high electron mobility transistors under reverse AC electrical stress - 文章详情页

作者：

Shi, Lei (Shi, Lei.) | Feng, Shi-Wei (Feng, Shi-Wei.) (学者：冯士维) | Guo, Chun-Sheng (Guo, Chun-Sheng.) | Zhu, Hui (Zhu, Hui.)

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EI Scopus

摘要：

We　apply　a　reverse　AC　electrical　stress　on　the　Gate　of　AlGaN/GaN　high　electron　mobility　transistors　(HEMTs).　The　change　of　Schottky　Barrier　height　(SBH)　with　respect　to　time　is　derived　from　the　I-V　and　C-V　characteristics,　respectively.　The　SBHs　calculated　from　the　two　methods　show　similar　decreasing　trend.　However,　the　one　from　I-V　method　recovers　partly　after　stress　is　removed.　The　behaviour　is　attributed　to　the　traps　in　AlGaN　barrier　and　surface　state　of　the　gate　as　a　result　of　the　electrical　stress,　and　the　recovery　of　surface　state　is　the　main　factor　for　the　recovery　phenomena.　©　2012　IEEE.

关键词：

Aluminum alloys Aluminum gallium nitride Electron mobility Gallium alloys Gallium nitride High electron mobility transistors III-V semiconductors Integrated circuits Recovery Schottky barrier diodes Semiconductor alloys Semiconductor metal boundaries Surface states

作者机构：

[ 1 ] [Shi, Lei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Feng, Shi-Wei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Guo, Chun-Sheng]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Zhu, Hui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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