Fabrication of high-voltage light emitting diodes - 文章详情页

作者：

Ding, Yan (Ding, Yan.) | Guo, Weiling (Guo, Weiling.) | Cui, Bifeng (Cui, Bifeng.) | Liu, Jianpeng (Liu, Jianpeng.) | Wu, Guoqing (Wu, Guoqing.) 展开

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摘要：

Fabrication　of　the　GaN-based　12-V　high-voltage　light　emitting　LEDs　(HV-LEDs)　are　introduced　in　detail,　including　process　flow　chat　and　SEM　image.　Electrical　and　optical　characteristics　are　also　investigated.　Index　Terms:　high　voltage,　GaN-based,　light-emitting　diodes.　©　2012　OSA.

关键词：

Nanotechnology III-V semiconductors Gallium nitride Light emitting diodes Diodes Fabrication

作者机构：

[ 1 ] [Ding, Yan]Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China
[ 2 ] [Guo, Weiling]Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China
[ 3 ] [Cui, Bifeng]Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China
[ 4 ] [Liu, Jianpeng]Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China
[ 5 ] [Wu, Guoqing]Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China

通讯作者信息：

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The characteristics of high power LED at low and high temperature
2011，Journal of Beijing University of Technology
The effect of temperature on the color temperature of gan-based led
2011，
Influence of plasma treatment on performances of the GaN-based light-emitting diodes
2008，Journal of Beijing University of Technology
Analysis of degradation of GaN-Based light-emitting diodes
2009，2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

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年份： 2012

语种：英文

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信息学部

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