Fabrication of high-voltage light emitting diodes - 文章详情页

作者：

Ding, Yan (Ding, Yan.) | Guo, Weiling (Guo, Weiling.) | Cui, Bifeng (Cui, Bifeng.) | Liu, Jianpeng (Liu, Jianpeng.) | Wu, Guoqing (Wu, Guoqing.)

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摘要：

Fabrication　of　the　GaN-based　12-V　high-voltage　light　emitting　LEDs　(HV-LEDs)　are　introduced　in　detail,　including　process　flow　chat　and　SEM　image.　Electrical　and　optical　characteristics　are　also　investigated.　Index　Terms:　high　voltage,　GaN-based,　light-emitting　diodes.　©　2012　OSA.

关键词：

Nanotechnology III-V semiconductors Gallium nitride Light emitting diodes Diodes Fabrication

作者机构：

[ 1 ] [Ding, Yan]Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China
[ 2 ] [Guo, Weiling]Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China
[ 3 ] [Cui, Bifeng]Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China
[ 4 ] [Liu, Jianpeng]Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China
[ 5 ] [Wu, Guoqing]Key Laboratory of Opto-electronics Technology (Beijing University of Technology), Ministry of Education, Beijing 100124, China

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