Impact of high frequency correlated noise on SiGe HBT low noise amplifier design - 文章详情页

作者：

Shen, Pei (Shen, Pei.) | Niu, Guofu (Niu, Guofu.) | Xu, Ziyan (Xu, Ziyan.) | Zhang, Wanrong (Zhang, Wanrong.)

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EI Scopus

摘要：

This　paper　investigates　the　impact　of　high　frequency　noise　correlation　on　SiGe　HBT　LNA　design.　With　correlation,　simultaneous　noise　and　impedance　match　is　found　to　continue　to　hold　approximately.　However,　a　larger　size　and　hence　a　higher　biasing　current　are　required　for　noise　matching.　The　actual　noise　figure　(NF)　of　LNAs　designed　without　considering　noise　correlation　is　also　investigated.　Further　investigation　shows　that　a　size　considerably　smaller　than　noise　matching　size　is　more　preferable,　as　it　produces　high　gain,　high　linearity　and　NF　only　slightly　higher　noise　figure　at　much　smaller　power　consumption.　©　2012　IEEE.

关键词：

Si-Ge alloys Low noise amplifiers Monolithic integrated circuits High frequency amplifiers Noise figure Impedance matching (electric)

作者机构：

[ 1 ] [Shen, Pei]Electrical and Computer Engineering Department, Auburn University, Auburn, AL 36849, United States
[ 2 ] [Shen, Pei]Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Niu, Guofu]Electrical and Computer Engineering Department, Auburn University, Auburn, AL 36849, United States
[ 4 ] [Xu, Ziyan]Electrical and Computer Engineering Department, Auburn University, Auburn, AL 36849, United States
[ 5 ] [Zhang, Wanrong]Beijing University of Technology, Beijing, 100124, China

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