High repetition frequency mode-locked semiconductor disk laser - 文章详情页

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EI Scopus

摘要：

A　compact　passively　mode-locked　semiconductor　disk　laser　with　a　high　repetition　frequency　of　3GHz　is　demonstrated.　4.9ps　pulse　duration　and　30mW　average　output　power　are　obtained　with　1.4W　of　808nm　incident　pump　power.　The　gain　chip　consists　of　16　compressively　strained　InGaAs　symmetrical　step　quantum　wells　in　the　active　region.

关键词：

Convolutional codes Data communication systems Electronic commerce Gallium alloys Gallium compounds Indium alloys Lasers Mode-locked fiber lasers Optical communication Optical pumping Passive mode locking Quantum well lasers Semiconducting indium gallium arsenide Semiconductor alloys Semiconductor lasers Semiconductor quantum wells Ultrafast lasers

作者机构：

[ 1 ] [Song, Yanrong]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, Peng]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Tian, Jinrong]College of Applied Sciences, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Zhang, Zhigang]School of Electronics Engineering and Computer Science, Peking University, Beijing, 100871, China
[ 5 ] [Tan, Hark Hoe]Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia
[ 6 ] [Jagadish, C.]Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200, Australia

通讯作者信息：

电子邮件地址：

yrsong@bjut.edu.cn

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