Electromigration behavior in in-situ Cu6Sn5 reinforced eutectic SnAg composite solder joints - 文章详情页

作者：

Wang, Xiaoya (Wang, Xiaoya.) | Han, Mengting (Han, Mengting.) | Ma, Liming (Ma, Liming.) | Xu, Guangchen (Xu, Guangchen.) | Guo, Fu (Guo, Fu.) (学者：郭福)

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EI Scopus

摘要：

Due　to　the　excellent　resistance　to　thermal　mechanical　fatigue　and　creep　resistance　properties　of　in-situ　Cu6Sn5　reinforced　composite　solder,　it＇s　meaningful　to　further　investigate　the　Electromigration　(EM)　behaviors　of　such　novel　composite　solder.　We　used　in-situ　method　to　prepare　Cu6Sn5　reinforced　Sn-3.5Ag　composite　solders,　the　weight　fraction　of　which　was　1　vol.%,　5　vol.%,　and　20　vol.%,　respectively.　A　constant　electric　current　was　applied　to　a　one-dimensional　solder　joint　which　ensures　a　uniform　distribution　of　current　density.　For　this　study,　a　current　density　of　104　A/cm2　was　applied　to　solder　joints　under　75°C.　The　evolution　of　interior　microstructure　due　to　current　stressing　effects　was　observed　by　using　scanning　electron　microscopy　(SEM).　The　results　revealed　that　after　current　stressing　for　96　and　192　h,　no　remarkable　EM　damages　exhibited　in　solder　matrix.　Whereas,　after　current　stressing　for　384　h,　1　vol.%　and　20　vol.%　Cu6Sn　5　reinforced　composite　solder　joints　have　suffered　different　degrees　of　polarity　effects.　©　2011　IEEE.

关键词：

Packaging Scanning electron microscopy Electric currents Silver alloys Reinforcement Copper alloys Thermal fatigue Tin alloys Binary alloys Electromigration Creep resistance Lead-free solders Electronics packaging

作者机构：

[ 1 ] [Wang, Xiaoya]College of Materials Science and Engineering, Beijing University of Technology, China
[ 2 ] [Han, Mengting]College of Materials Science and Engineering, Beijing University of Technology, China
[ 3 ] [Ma, Liming]College of Materials Science and Engineering, Beijing University of Technology, China
[ 4 ] [Xu, Guangchen]College of Materials Science and Engineering, Beijing University of Technology, China
[ 5 ] [Guo, Fu]College of Materials Science and Engineering, Beijing University of Technology, China

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