A study of dual-Vt configurations of an 8T SRAM cell in 45nm - 文章详情页

作者：

Liu, Wenbin (Liu, Wenbin.) | Wang, Jinhui (Wang, Jinhui.) | Wu, Wuchen (Wu, Wuchen.) (学者：吴武臣) | Peng, Xiaohong (Peng, Xiaohong.) | Hou, Ligang (Hou, Ligang.)

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EI Scopus

摘要：

Since　the　dual-threshold　voltage　assignment　is　an　effective　technique　to　reduce　leakage　power　with　negligible　area　overhead,　we　evaluate　and　compare　the　performance　of　an　8T　SRAM　cell　in　various　dominant　dual-Vt　configurations　in　this　paper,　in　order　to　provide　the　designer　with　a　reasonable　trade-off　in　SNM,　leakage　power,　and　delay　for　further　different　desired　yields.　According　to　simulation　results,　it　is　concluded　that　the　configuration　C8　has　the　highest　SNM　and　high　Vt　Mnl　can　suppress　the　leakage　current　effectively.　At　last,　the　write　and　read　delay　time　in　different　dual-Vt　configurations　are　analyzed,　and　the　reasons　for　delay　variation　are　given.　©　2011　IEEE.

关键词：

Economic and social effects Leakage currents Static random access storage Leakage (fluid) Threshold voltage

作者机构：

[ 1 ] [Liu, Wenbin]VLSI and System Lab., Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wang, Jinhui]VLSI and System Lab., Beijing University of Technology, Beijing 100124, China
[ 3 ] [Wu, Wuchen]VLSI and System Lab., Beijing University of Technology, Beijing 100124, China
[ 4 ] [Peng, Xiaohong]VLSI and System Lab., Beijing University of Technology, Beijing 100124, China
[ 5 ] [Hou, Ligang]VLSI and System Lab., Beijing University of Technology, Beijing 100124, China

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