In　the　processing　of　proton　implanted　VCSELs,　Au　and　SiO2　are　used　as　the　mask　to　protect　the　surface　against　bombardment.　Under　the　guidance　of　the　LSS　theory,　a　series　of　parameters　are　designed　and　optimized,　such　as　the　dose,　the　energy　and　the　thickness　of　the　mask.　SRIM　are　employed　to　simulation　the　designed　parameters.　It　can　be　achieved　to　fabricating　the　proton　implanted　VCSELs　under　the　condition　of　three　times　bombardment　and　suitable　thickness　of　mask,　where　the　energy　are　330kev,　250kev,　160kev　and　the　mask　are　1.5μm,　0.5μm.　When　the　parameters　are　used　to　fabricate　the　VCSELs,　we　get　a　device　performance　of　0.5mw　output　power,　and　the　threshold　current　is　6.5mA,　which　is　similar　to　the　reported　earlier.　©　2011　IEEE.