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作者:

Wang, Yangzhong (Wang, Yangzhong.) | Zhang, Xin (Zhang, Xin.) | Wang, Yang (Wang, Yang.) | Liu, Hongliang (Liu, Hongliang.) | Zhang, Jiuxing (Zhang, Jiuxing.)

收录:

EI Scopus SCIE

摘要:

Mg3Sb2 shows poor comprehensive thermoelectric properties mainly because its conductivity is very poor, despite it has very low thermal conductivity. Excess Mg combined with small amount of Te doping can control carrier type and carrier concentration. The semiconductor and metallic transport mechanism coordinate to control the electrical transport characteristics and improve the electrical transport performance. The lattice thermal conductivity of Mg3Sb2 decreases after Te doping. The maximum ZT value is 0.78 for Mg3.2Sb1.99Te0.01 at 773 K.

关键词:

carrier concentration thermoelectric thermal conductivity n-type Mg3Sb2

作者机构:

  • [ 1 ] [Wang, Yangzhong]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 2 ] [Zhang, Xin]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 3 ] [Wang, Yang]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Liu, Hongliang]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Zhang, Jiuxing]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, Jiuxing]Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

通讯作者信息:

  • [Zhang, Xin]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China;;[Zhang, Jiuxing]Beijing Univ Technol, Coll Mat Sci & Engn, Minist Educ, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China;;[Zhang, Jiuxing]Hefei Univ Technol, Sch Mat Sci & Engn, Hefei 230009, Anhui, Peoples R China

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来源 :

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

ISSN: 1862-6300

年份: 2019

期: 6

卷: 216

2 . 0 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:123

JCR分区:3

被引次数:

WoS核心集被引频次: 27

SCOPUS被引频次: 34

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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