A　high　slope　efficiency　vertical-cavity　surface-emitting　laser　(VCSEL)　is　described.　The　InGaAs/GaAsP　strain　compensated　multiple　quantum　wells　(MQWs)　are　designed　by　PICS3D.　The　wavelength　redshift　occurs　due　to　the　thermal　effect,　the　lasing　wavelength　of　MQWs　is　designed　to　be　around　928　nm.　The　active　region　consists　of　five　compressively　strained　4.4　nm　thick　In0.16Ga0.84As　quantum　wells　separated　and　surrounded　by　6.2　nm　thick　GaAs0.88P0.12　tensile　strained　compensation　layers　to　obtain　the　high　quantum　efficiency　and　ensure　the　stress　release.　Subsequently,　the　MQWs　are　grown　by　metal-organic　chemical　vapor　deposition　(MOCVD)　and　the　photoluminescence　(PL)　spectrum　is　measured　using　an　Nd:YAG　laser　(532　nm　excitation),　of　which　the　peak　wavelength　is　approximately　928　nm　and　the　full　width　at　half　maximum　is　nearly　17.1　nm.　The　resonant　cavity　is　surrounded　by　p-　and　n-DBRs.　The　n-DBRs　are　designed　to　be　a　28-period　AlAs/Al0.12Ga0.88As　and　3.5-period　Al0.90Ga0.10As/Al0.12Ga0.88As,　and　the　p-DBR　is　designed　to　be　a　23-period　Al0.90Ga0.10As/Al0.12Ga0.88As.　The　thickness　of　each　a　material　is　lambda/4n　(lambda　=　940　nm,　n　represents　refractive　index),　and　20　nm　graded　layer　is　inserted　in　the　interface　between　two　types　of　materials.　The　p-/n-DBRs＇　experiment　PL　reflection　spectra　(using　a　white　illuminant)　are　carried　out,　the　central　wavelength　is　around　938.7　nm,　and　the　reflectivity　values　of　p-/n-DBRs　are　nearly　99.0%　and　99.7%,　respectively.　The　VCSELs　are　grown　by　MOCVD　technique,　and　treated　by　dry　etching,　wet　oxidation,　metal　electrode　technology　and　other　processes.　In　the　process　of　dry　etching,　the　top　mesa　is　treated　by　inductively　coupled　plasma　with　BCl3　and　Cl-2　chemistry.　In　order　to　expose　the　oxide　layer　the　wet　oxidized　process　is　carried　out,　and　the　etching　depth　is　nearly　3500　nm.　An　oxidation　furnace　is　heated　for　15　min　prior　to　oxidation.　Then　the　oxide　aperture　is　shaped　by　the　wet　nitrogen　oxidation　furnace　at　425　degrees　C　with　an　N2　flow　of　200　sccm,　and　the　oxide　rate　is　approximately　0.40　mu　m/min　for　A(0.98)Ga(0.02)As.　The　diameter　of　oxide　aperture　is　made　into　an　8　mu　In　diameter.　In　the　process　of　metal　electrode　technology,　AuGeNi　alloy　is　sputtered　on　the　top　surface　to　form　p-type　ohmic　contact,　and　Ti/Pt/Au　is　evaporated　on　the　back　surface　of　substrate　to　form　an　n-type　ohmic　contact.　Rapid　thermal　annealing　at　350　degrees　C　in　a　nitrogen　atmosphere　is　carried　out　subsequently　to　obtain　a　good-quality　ohmic　contact.　Finally,　we　test　the　VCSELs＇　L-I-V　characteristics　and　spectra　in　different　areas.　In　area　1,　room-temperature　lasing　at　around　940　nm　is　achieved　with　a　threshold　current　of　0.95　mA,　a　slope　efficiency　of　0.96　W/A,　and　an　output　power　of　4.75　mW.　In　area　2,　threshold　current　is　1　mA,　a　slope　efficiency　is　0.81　W/A　at　25　degrees　C　and　threshold　current　is　1.9　mA,　slope　efficiency　is　0.57　W/A　at　25　degrees　C.　The　output　power　values　reach　up　to　3.850　mW　and　2.323　mW　at　25　degrees　C　and　80　degrees　C,　respectively.