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作者:

Li, Weiguo (Li, Weiguo.) | Guo, Weiling (Guo, Weiling.) | Cui, Bifeng (Cui, Bifeng.) | Xu, Xinwei (Xu, Xinwei.) | Cui, Desheng (Cui, Desheng.)

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摘要:

In this paper, two kinds of GaN-based light emitting diodes (LED) with difference in color temperature were tested under the temperature range from 283K to 353K and current of 350mA.The samples were fabricated with the same blue-ray chip but coated by different yttrium aluminum garnet (YAG) phosphor. After analyzing the PL spectrum, the result shows that the color temperature of LED increases while temperature raising, what's more, the cool-color-temperature LED increases more. It also proves that the color temperature of GaN-based write LED has relation to the proportion of blue ray radiant flux. © 2011 IEEE.

关键词:

Aluminum coatings Gallium nitride III-V semiconductors Light emission Light emitting diodes Phosphors Red Shift Remote sensing Yttrium aluminum garnet

作者机构:

  • [ 1 ] [Li, Weiguo]KEY Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
  • [ 2 ] [Guo, Weiling]KEY Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
  • [ 3 ] [Cui, Bifeng]KEY Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
  • [ 4 ] [Xu, Xinwei]KEY Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
  • [ 5 ] [Cui, Desheng]KEY Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China

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年份: 2011

页码: 6468-6471

语种: 中文

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