Selection of emitter ballast resistance using Ic-VBE fly-back characteristic in bipolar transistors - 文章详情页

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In　this　paper,　the　IC-VBE　characteristic　of　bipolar　transistors　are　described　by　novel　analytical　formulations,　which　for　the　first　time　present　the　expression　of　collect　current　in　the　second　fly-back　point.　Through　the　analytical　formulations,　it　is　found　that　a　smaller　emitter　ballast　resistance　can　make　the　collector　current　achieve　the　second　fly-back　point　before　transistors　are　burned-out,　and　then　returns　to　a　stable　situation.　Such　an　emitter　ballast　resistance　is　beneficial　to　both　of　the　output　power　and　thermal　stability　at　the　same　time.　The　experiment　result　also　verifies　our　conclusions.　©　2011　CJMW.

关键词：

Ballast (railroad track) Bipolar integrated circuits

作者机构：

[ 1 ] [Liang, Chen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wan-Rong, Zhang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Dong-Yue, Jin]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Hong-Yun, Xie]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Chun-Bao, Ding]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Jia-Xin, Ju]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Ren-Qing, Wang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 8 ] [Ying, Xiao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 9 ] [Qiang, Fu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 10 ] [Xin, Zhao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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