Research on non-uniform emitter spacing technology to improve thermal stability of multi-finger SiGe HBT under High-Power - 文章详情页

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EI Scopus

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An　electro-thermal　feedback　model　for　multi-finger　power　SiGe　heterojunction　bipolar　transistor　(HBT)　was　presented　in　this　paper.　Based　on　the　model,　the　influence　of　the　change　of　emitter　finger　spacing　on　the　surface　temperature　distribution　of　SiGe　HBT　was　investigated.　It　is　found　that　under　the　same　bias　conditions,　with　the　increase　of　emitter　finger　spacing,　the　peak　junction　temperature　drops　while　the　temperature　difference　among　emitter　fingers　decreases,　but　the　non-uniform　temperature　distribution　still　exists.　Based　on　this　conclusion,　an　optimization　method　for　non-uniform　emitter　finger　spacing　(NUSE)　was　proposed　without　increasing　the　chip　area.　In　order　to　thoroughly　study　the　improvement　effect　of　NUSE,　the　surface　temperature　distribution　of　novel　SiGe　HBT　with　NUSE　under　various　bias　conditions　is　simulated.　The　results　show　that　under　different　bias　conditions,　the　peak　junction　temperature　of　the　novel　device　fall　obviously,　and　the　uniformity　of　temperature　distribution　on　emitter　fingers　was　significantly　improved,　which　can　not　be　achieved　for　SiGe　HBT　with　traditional　uniform　emitter　finger　spacing　(UES)　structure.　The　superiority　of　NUSE　technology　is　exhibited.　©　2011　IEEE.

关键词：

Atmospheric temperature Heterojunction bipolar transistors Heterojunctions Si-Ge alloys Surface properties Temperature distribution Thermodynamic stability

作者机构：

[ 1 ] [Zhao, Xin]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Zhang, Wan-Rong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Jin, Dong-Yue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Xie, Hong-Yun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Fu, Qiang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Zhang, Dong-Hui]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Liu, Bo-Yu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 8 ] [Zhou, Yong Qiang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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