Research and comparison of two life testing methods - 文章详情页

作者：

Qi, Haochun (Qi, Haochun.) | Lu, Changzhi (Lu, Changzhi.) | Zhang, Xiaoling (Zhang, Xiaoling.) | Xie, Xuesong (Xie, Xuesong.)

收录：

EI Scopus

摘要：

Both　traditional　life　testing　method　and　constant　Electrical　stress　and　Temperature　Ramp　stress　Method　(CETRM)　are　described.　The　two　methods　are　compared　taking　the　GaAs　microwave　power　field　effect　transistor　(FET)　DX0011　life　testing　as　an　example.　CETRM　used　less　testing　samples,　took　shorter　testing　time,　and　provided　more　reliability　information　than　common　life　testing　method.　©　2011　IEEE.

关键词：

III-V semiconductors Field effect transistors Gallium arsenide Testing Reliability Electron emission

作者机构：

[ 1 ] [Qi, Haochun]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China
[ 2 ] [Lu, Changzhi]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China
[ 3 ] [Zhang, Xiaoling]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China
[ 4 ] [Xie, Xuesong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100024, China

通讯作者信息：

电子邮件地址：

jetqinaruto@gmail.com

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至