Design of SiGe HBT UWB low noise amplifier employing broadband noise canceling - 文章详情页

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摘要：

A　SiGe　HBT　low-noise　amplifier　(LNA)　for　UWB　application　is　presented.　According　to　the　analysis　for　noise　of　common　base　transistor,　noise　canceling　structure　for　SiGe　HBT　is　proposed　to　reduce　the　noise　arising　from　common　transistor,　thus　reduce　the　noise　of　LNA.　Meanwhile　it　also　compensate　the　gain　of　the　LNA,　thus　improves　the　gain　flatness.　The　chip　layout　has　been　designed,　its　area　is　0.56×0.53　mm2.　The　simulation　results　of　the　LNA　demonstrate　that　in　the　range　of　UWB,　the　noise　figure　is　reduced　2　dB　compared　with　the　case　without　noise　canceling,　the　gain　is　16.4∼17.4,　gain　flatness　is　±0.5dB,　linearity　is　6dBm.　©　2011　IEEE.

关键词：

Si-Ge alloys Low noise amplifiers Heterojunction bipolar transistors Broadband amplifiers Noise figure Heterojunctions

作者机构：

[ 1 ] [Ding, Chunbao]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Zhang, Wanrong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Xie, Hongyun]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Chen, Liang]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Shen, Pei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Zhang, Donghui]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Liu, Boyu]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 8 ] [Zhou, Yongqiang]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 9 ] [Guo, Zhengjie]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 10 ] [Lu, Zhiyi]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

查看成果更多字段

UWB LNA based on current-reused topology and active inductor
2014，Journal of Huazhong University of Science and Technology (Natural Science Edition)
Design of active match SiGe HBT low noise amplifier employing noise cancellation
2012，Journal of Beijing University of Technology
Design and fabrication of SiGe HBT low noise amplifier
2010，Journal of Electronics and Information Technology
Design of SiGe HBT UWB low noise amplifier based on Darlington Cascode structure
2012，Chinese High Technology Letters

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年份： 2011

语种：英文

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