Study on channel parameters of static induction transistor - 文章详情页

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EI Scopus

摘要：

The　electric　performance　of　static　induction　transistor　(SIT)　is　dependent　strongly　on　the　channel　parameters　of　device.　The　ratio　of　is　an　essential　combined　channel　parameter　not　only　for　I-V　characteristics　but　also　for　the　high-current　performance　of　device　especially　for　the　high　frequency　SIT　(HF　SIT),　which　are　researched　in　this　article.　The　pinch　factor　is　also　a　key　combined　channel　parameter　embodies　the　general　control　criterion　of　fabrication　parameters　in　determining　whether　it　is　a　mixed,　triode-like　or　pentode-like　I-V　characteristic　which　are　also　studied　in　detail.　A　great　deal　of　experimental　results　is　given　which　are　available　and　convenient　for　design　and　fabrication　of　HF　SIT,　particularly　for　mixed　I-V　non-saturating　characteristics.　©　2011　Springer-Verlag　Berlin　Heidelberg.

关键词：

Electrical engineering Transistors Mathematical techniques

作者机构：

[ 1 ] [Ju, Jiaxin]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Ju, Jiaxin]College of Information Engineering, North China University of Technology, Beijing 100144, China
[ 3 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Du, Haolin]College of Information Engineering, North China University of Technology, Beijing 100144, China
[ 5 ] [Jiang, Yanfeng]College of Information Engineering, North China University of Technology, Beijing 100144, China
[ 6 ] [Yang, Tengfei]College of Information Engineering, North China University of Technology, Beijing 100144, China
[ 7 ] [Zhang, Yamin]College of Information Engineering, North China University of Technology, Beijing 100144, China

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电子邮件地址：

jxju@ncut.edu.cn

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