Mode-locked Yb-doped fiber laser with epitaxial graphene grown on 6H-SiC substrates - 文章详情页

作者：

Liu, Jiang (Liu, Jiang.) | Wei, Rusheng (Wei, Rusheng.) | Wang, Ke (Wang, Ke.) | Xu, Xiangang (Xu, Xiangang.) | Wang, Pu (Wang, Pu.) (学者：王璞)

收录：

EI Scopus

摘要：

Graphene　epitaxially　grown　on　6H-SiC　substrates　by　thermal　decomposition　was　used　as　saturable　absorbers　for　mode-locking　of　ytterbium-doped　fiber　lasers.　Stable　picosecond　19　nJ　pulse　centered　at　1035　nm　was　generated　at　1.05　MHz　repetition　rate.　©　2011　IEEE.

关键词：

Decomposition Fiber lasers Graphene Locks (fasteners) Mode-locked fiber lasers Optical fibers Pulse repetition rate Saturable absorbers Silicon carbide Silicon compounds Substrates Ytterbium compounds

作者机构：

[ 1 ] [Liu, Jiang]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wei, Rusheng]State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
[ 3 ] [Wang, Ke]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Xu, Xiangang]State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
[ 5 ] [Wang, Pu]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

wangpuemail@bjut.edu.cn

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