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作者:

Cheng, Qing (Cheng, Qing.) | Shen, Jie (Shen, Jie.) | Yang, Xiaofeng (Yang, Xiaofeng.)

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EI Scopus SCIE

摘要:

We develop in this paper highly efficient, second order and unconditionally energy stable schemes for the epitaxial thin film growth models by using the scalar auxiliary variable (SAV) approach. A main difficulty here is that the nonlinear potential for the model without slope selection is not bounded from below so the SAV approach can not be directly applied. We overcome this difficulty with a suitable splitting of the total free energy density into two parts such that the integral of the part involving the nonlinear potential becomes bounded from below so that the SAV approach can be applied. We then construct a set of linear, second-order and unconditionally energy stable schemes for the reformulated systems. These schemes lead to decoupled linear equations with constant coefficients at each time step so that they can be implemented easily and very efficiently. We present ample numerical results to demonstrate the stability and accuracy of our SAV schemes.

关键词:

Coarsening dynamics Energy stable Gradient flow Thin film epitaxy

作者机构:

  • [ 1 ] [Cheng, Qing]Xiamen Univ, Sch Math Sci, Xiamen 361005, Fujian, Peoples R China
  • [ 2 ] [Shen, Jie]Xiamen Univ, Sch Math Sci, Xiamen 361005, Fujian, Peoples R China
  • [ 3 ] [Cheng, Qing]Xiamen Univ, Fujian Prov Key Lab Math Modeling & High Performa, Xiamen 361005, Fujian, Peoples R China
  • [ 4 ] [Shen, Jie]Xiamen Univ, Fujian Prov Key Lab Math Modeling & High Performa, Xiamen 361005, Fujian, Peoples R China
  • [ 5 ] [Shen, Jie]Purdue Univ, Dept Math, W Lafayette, IN 47907 USA
  • [ 6 ] [Yang, Xiaofeng]Univ South Carolina, Dept Math, Columbia, SC 29208 USA
  • [ 7 ] [Yang, Xiaofeng]Beijing Univ Technol, Beijing Inst Sci & Engn Comp, Beijing 100124, Peoples R China

通讯作者信息:

  • [Shen, Jie]Xiamen Univ, Sch Math Sci, Xiamen 361005, Fujian, Peoples R China;;[Shen, Jie]Xiamen Univ, Fujian Prov Key Lab Math Modeling & High Performa, Xiamen 361005, Fujian, Peoples R China;;[Shen, Jie]Purdue Univ, Dept Math, W Lafayette, IN 47907 USA

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来源 :

JOURNAL OF SCIENTIFIC COMPUTING

ISSN: 0885-7474

年份: 2019

期: 3

卷: 78

页码: 1467-1487

2 . 5 0 0

JCR@2022

ESI学科: MATHEMATICS;

ESI高被引阀值:25

JCR分区:1

被引次数:

WoS核心集被引频次: 60

SCOPUS被引频次: 53

ESI高被引论文在榜: 4 展开所有

  • 2022-3
  • 2022-1
  • 2021-11
  • 2021-9

万方被引频次:

中文被引频次:

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