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Formation of Hierarchical InAs Nanoring / GaAs Nanowire Heterostructures

Rings around the wire: Novel hierarchical heterostructures, assembled by radial deposition of InAs on GaAs nanowires with nonplanar side walls, result i...
M PaladuguJ ZouY Guo , ... -  《Angewandte Chemi...  -  被引量:  125  -  2008年
来源: Wiley

Novel Growth Phenomena Observed in Axial InAs/GaAs Nanowire Heterostructures

Gold on the move… A novel growth phenomenon of axial InAs/GaAs nanowire heterostructures catalyzed by Au particles was observed. Transmission electron ...
MohanchandPaladuguJin , ... -  《Small》  -  被引量:  88  -  2007年
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Growth and characterization of straight InAs/GaAs nanowire heterostructures on Si substrate

Vertical InAs/GaAs nanowire (NW) heterostructures with a straight InAs segment have been successfully fabricated on Si (111) substrate by using AlGaAs/G...
XinYanXia , ... -  《Chinese Physics B》  -  被引量:  9  -  2013年
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Drastic Improvement in Surface Flatness Properties by Using GaAs (111)A Substrates in Molecular Beam Epitaxy

We have studied the surface flatness properties of (111)A planes in both homoepitaxial growth of GaAs on GaAs and highly-mismatched heteroepitaxial grow...
H YamaguchiY HommaK Kanisawa , ... -  《Japanese Journal...  -  被引量:  10  -  1999年
来源: IOP

Axial GaAs/InAs nanowire heterostructures for photonic applications on Si

Combining direct bandgap III-V compound semiconductors, such as InAs and GaAs, with silicon to realize on-chip optical light emitters and detectors at t...
D Beznasyuk  -  被引量:  0  -  2018年

Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires

The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-sh...
O ArifV ZannierA Li , ... -  被引量:  0  -  2021年

Short-wave infrared (SWIR) photodetection by InAs/GaAs quantum dot heterostructures grown on Ge (100) substrate without Migration En...

Integration of III-V based optoelectronic devices with Silicon (Si) technology is the prime choice of researchers for the futuristic Si-photonics. Profu...
RK ADP BJS A , ... -  《Superlattices & ...  -  被引量:  0  -  2020年

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