Mode-locked fiber laser with few-layer epitaxial graphene grown on 6H-SiC substrates - 文章详情页

作者：

Liu, Jiang (Liu, Jiang.) | Wei, Rusheng (Wei, Rusheng.) | Xu, Xiangang (Xu, Xiangang.) | Wang, Pu (Wang, Pu.) (学者：王璞)

收录：

EI Scopus

摘要：

Few-layer　epitaxial　graphene　grown　on　6H　silicon　carbide　(SiC)　wafers　by　thermal　decomposition　was　used　as　novel　saturable　absorbers　for　mode-locking　of　ytterbium-doped　fiber　lasers,　which　generated　19nJ　single　pulse　energy　at　1.05MHz　repetition　rate.　©　OSA/CLEO　2011.

关键词：

Decomposition Fiber lasers Graphene Locks (fasteners) Mode-locked fiber lasers Pulse repetition rate Saturable absorbers Silicon carbide Silicon wafers

作者机构：

[ 1 ] [Liu, Jiang]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wei, Rusheng]State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
[ 3 ] [Xu, Xiangang]State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan 250100, China
[ 4 ] [Wang, Pu]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

wangpuemail@bjut.edu.cn

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