Electronic excitation induced solid-state amorphization in Ge-Sb-Te alloy - 文章详情页

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On　the　basis　of　ab　initio　molecular　dynamics　modeling,　we　show　that　Ge-Sb-Te　alloy　under　excitation　can　realize　amorphization　without　going　through　a　liquid　phase.　The　electronic　structure　analysis　further　reveals　that　the　excitation　mainly　involves　the　Ge　s-like　states　near　the　valence　band　maximum.　After　the　phase　transition,　the　coordination　number　of　Ge　is　reduced　from　six　to　four,　while　the　change　in　the　coordination　number　for　Sb　is　noticeably　less.　©　2011　Materials　Research　Society.

关键词：

Electronic structure Amorphization Molecular dynamics Semiconductor materials Excited states Antimony alloys

作者机构：

[ 1 ] [Li, Xian-Bin]State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
[ 2 ] [Liu, X.Q.]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing100022, China
[ 3 ] [Liu, Xin]Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, United States
[ 4 ] [Liu, Xin]School of Chemistry, Dalian University of Technology, Dalian 116024, China
[ 5 ] [Han, Dong]State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
[ 6 ] [Zhang, Z.]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing100022, China
[ 7 ] [Han, X.D.]Institute of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing100022, China
[ 8 ] [Zhang, S.B.]State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
[ 9 ] [Zhang, S.B.]Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, United States

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