• 综合
  • 标题
  • 关键词
  • 摘要
  • 学者
  • 期刊-刊名
  • 期刊-ISSN
  • 会议名称
搜索

作者:

Azam, Muhammad (Azam, Muhammad.) | Liu, Kong (Liu, Kong.) | Yue, Shizhong (Yue, Shizhong.) | Sun, Yang (Sun, Yang.) | Zhang, Dongyang (Zhang, Dongyang.) | Hassan, Ali (Hassan, Ali.) | Wang, Zhijie (Wang, Zhijie.) | Zhou, Huiqiong (Zhou, Huiqiong.) | Qu, Shengchun (Qu, Shengchun.) | Wang, Zhanguo (Wang, Zhanguo.)

收录:

SCIE

摘要:

The additive engineering to hybrid organic-inorganic perovskite precursors is an effective technique toward highly efficient stable photovoltaic devices, however, there is still a deficiency in fundamental understanding on how these additives affect the perovskite film and device performance as well. Herein is introduced a small organic molecule, DRCN5T, into a double-cation perovskite precursor and the function on device performance is systematically investigated. An appropriate amount of DRCN5T into the precursor can promote the crystallization of film with successful suppression of delta-FAPbI(3) phase, reduce grain boundaries and adequately passivate the native defect sites. In addition, the incorporation of DRCN5T also regulates the energy level alignment of the perovskite to charge transport layer suitably. This leads to the promotion of charge transport, reduction in non-radiative recombination, and boosts the efficiency to a value of 20.60% with greatly reduced hysteresis in the device. Moreover, the treatment by DRCN5T also significantly increases the stability of the devices in ambient environment. These findings open the gate to produce highly crystallized perovskite/organic-molecule active layers toward commercialization of perovskite solar cells.

关键词:

passivation crystallization defect states perovskites small molecules

作者机构:

  • [ 1 ] [Azam, Muhammad]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 2 ] [Liu, Kong]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 3 ] [Yue, Shizhong]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 4 ] [Sun, Yang]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 5 ] [Wang, Zhijie]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 6 ] [Qu, Shengchun]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 7 ] [Wang, Zhanguo]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 8 ] [Azam, Muhammad]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 9 ] [Liu, Kong]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 10 ] [Yue, Shizhong]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 11 ] [Sun, Yang]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 12 ] [Wang, Zhijie]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 13 ] [Qu, Shengchun]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 14 ] [Wang, Zhanguo]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
  • [ 15 ] [Zhang, Dongyang]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 16 ] [Zhou, Huiqiong]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China
  • [ 17 ] [Hassan, Ali]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • [Wang, Zhijie]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;;[Qu, Shengchun]Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China;;[Wang, Zhijie]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;;[Qu, Shengchun]Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China;;[Zhou, Huiqiong]Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, CAS Key Lab Nanosyst & Hierarch Fabricat, Beijing 100190, Peoples R China

查看成果更多字段

相关关键词:

来源 :

SOLAR RRL

ISSN: 2367-198X

年份: 2019

期: 3

卷: 3

7 . 9 0 0

JCR@2022

JCR分区:1

被引次数:

WoS核心集被引频次: 24

SCOPUS被引频次: 22

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 4

在线人数/总访问数:95/4300936
地址:北京工业大学图书馆(北京市朝阳区平乐园100号 邮编:100124) 联系我们:010-67392185
版权所有:北京工业大学图书馆 站点建设与维护:北京爱琴海乐之技术有限公司