A high linearity 6th-order active R-MOSFET-C band-pass filter for power-line communication - Details

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Abstract：

A　linearity　improvement　technique　is　proposed　on　the　design　of　low　frequency　(132　KHz　center　frequency,　40　KHz　band　frequency)　power-line　communication　band-pass　filter,　which　focus　on　the　linearity　of　large　R-MOSFET.　In　order　to　enhance　the　linearity　of　the　triode-mode　MOSFET　variable　resistors,　driving　the　controlling　voltages　of　the　R-MOSFET　in　a　resistor　tuning　schematic　instead　of　the　main　signal　schematic　is　chosen.　Further　more,　appropriate　control　bits　are　added　to　adjust　the　center　frequency　of　the　band-pass　filter.　Fabricated　in　SMIC0.18μm　CMOS　technology,　this　6th-order　Chebvshev　I　filter　achieves　5K　Hz　band　frequency　deviation　and　43dB　in-band　IIP3,　and　dissipates　4.86mW　from　a　1.8-V　supply;　the　on-chip　continuous　automatic　tuning　block　(MASTER)　dissipates　2.05mW　at　the　supply　of　3.3V.　©　2010　IEEE.

Keyword：

Power MOSFET Resistors Tuning Bandpass filters Carrier transmission on power lines Speed control Continuous time systems

Author Community：

[ 1 ] [Zhu, Di]Beijing Embedded System Key Lab., Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Wang, Jiacheng]Beijing Embedded System Key Lab., Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Zhong, Chaoli]Beijing Embedded System Key Lab., Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Tian, Jie]Beijing Embedded System Key Lab., Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Tang, Yiming]Beijing Embedded System Key Lab., Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Wan, Peiyuan]Beijing Embedded System Key Lab., Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Lin, Ping]Beijing Embedded System Key Lab., Beijing University of Technology, Beijing, 100124, China