Impact of bias current and geometry on noise performance of SiGe HBT low noise amplifier - 文章详情页

作者：

收录：

EI Scopus

摘要：

The　noise　figure　of　SiGe　HBT　for　low　noise　amplification　is　analyzed　and　its　intrinsic　minimum　noise　figure　is　expressed　analytically.　Four　types　of　SiGe　HBTs　with　different　transistor　geometry　of　emitter　stripe　width,　emitter　stripe　length　and　base　stripe　number　were　fabricated　using　a　state-of-art　SiGe　HBT　technology.　The　considerations　involved　in　the　judicious　choice　of　biased　current　and　transistor　geometry　are　explored　through　theory　data　and　measuring　results.　A　conclusion　is　drawn　that　an　optimum　noise　figure　can　be　achieved　by　proper　choice　of　biased　current　and　transistor　geometry　with　longer　emitter　length　and　more　base　stripe　number.　©　2010　IEEE.

关键词：

Si-Ge alloys Low noise amplifiers Geometry Noise figure Millimeter waves

作者机构：

[ 1 ] [Xie, Hongyun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, Wanrong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Shen, Pei]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Chen, Liang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Sun, Botao]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [You, Yunxia]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China

通讯作者信息：

电子邮件地址：

查看成果更多字段

成果类型
所属机构

所有年份指定年份从至