Reliability evaluation of Schottky contact of AlGaN/GaN HEMT, based on two AC voltages with different frequencies - 文章详情页

作者：

Hu, Peifeng (Hu, Peifeng.) | Feng, Shiwei (Feng, Shiwei.) (学者：冯士维) | Guo, Chunsheng (Guo, Chunsheng.) | Zhang, Guangchen (Zhang, Guangchen.) | Qiao, Yanbin (Qiao, Yanbin.)

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EI Scopus

摘要：

This　paper　presents　a　reliability　evaluation　of　Schottky　contact　of　AlGaN/GaN　HEMT.　The　Schottky　barrier　height(SBH)　and　ideality　factor　are　investigated　through　the　current-voltage(I-V)　characteristics.　Two　kinds　of　ac　voltages　with　different　frequencies　(10　kHz　and　1　MHz)　are　applied　on　the　two　similar　Schottky　contacts　of　AlGaN/GaN　HEMT,　and　the　I-V　curves　are　measured.　From　the　measured　results,　we　find　that　the　SBH　increases　and　the　ideality　factor　decreases　after　the　same　time.　The　1　MHz　ac　voltage　applied　on　device　leads　to　a　more　and　faster　increase　of　SBH　than　that　of　10　kHz.　And　the　decrease　of　ideality　factor　for　1　MHz　is　more　than　that　of　10　kHz.　The　reverse　I-V　characteristics　of　Schottky　contact　of　AlGaN/GaN　HEMT　also　present　a　larger　change　for　1MHz　than　that　of　10　kHz.　In　addition,　we　give　a　simple　explanation　why　the　values　of　ideality　factor　are　greater　than　2.0　for　both　two　Schottky　contacts　of　AlGaN/GaN　HEMT.　©2010　IEEE.

关键词：

Aluminum gallium nitride Gallium nitride III-V semiconductors Schottky barrier diodes Semiconductor metal boundaries

作者机构：

[ 1 ] [Hu, Peifeng]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Feng, Shiwei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Guo, Chunsheng]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Zhang, Guangchen]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Qiao, Yanbin]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

通讯作者信息：

电子邮件地址：

hupeifeng@emails.bjut.edu.cn

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