Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition - 文章详情页

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EI Scopus

摘要：

GaN/AlN　two-layer　films　with　different　thickness　are　synthesized　on　Si　substrates　by　pulsed　laser　deposition　(PLD).　GaN　and　AlN　single-layer　films　are　also　synthesized　for　comparison.　It　is　found　that　the　turn-on　field　of　the　GaN/AlN　twolayer　films　are　considerably　decreased　2　orders　of　magnitude　than　that　of　single-layer　films.　The　improvement　of　FE　characteristics　an　attributed　to　the　quantum　structure　effects,　which　supplies　a　favorable　location　of　electron　emission　and　enhances　tunneling　ability.　We　show　that　by　tuning　the　thickness　of　GaN/AlN,　various　FE　characteristics　can　be　obtained,　which　is　induced　by　the　modulation　of　quantum　potential　well/barrier　structure.　It　indicates　that　an　optimal　thickness　exists　for　GaN/AlN　two-layer　nano-films　to　give　best　field　emission　performance.　©2010　IEEE.

关键词：

Aluminum nitride Electron emission Field emission Gallium nitride III-V semiconductors Nanoelectronics Pulsed laser deposition Pulsed lasers Silicon Substrates

作者机构：

[ 1 ] [Zhao, Wei]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wang, Ruzhi]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Wang, Fengying]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Chen, Siying]School of Optoelectronics, Beijing Institute of Technology, Beijing 10081, China
[ 5 ] [Wang, Bo]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Wang, Hao]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Yan, Hui]College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China

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wrz@bjut.edu.cn

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