The influence of the growth temperature on the doping characteristics of P-GaP layers in AlGaInP red LED - 文章详情页

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EI Scopus

摘要：

The　doping　characteristics　of　P-GaP　layer　in　AlGaInP　red　LED　has　been　studied,　by　changing　the　low　pressure　metal　organic　chemical　vapor　deposition　(LP-MOCVD)　system＇s　growth　temperature.　Several　epitaxial　samples,　which　grown　at　different　temperatures　of　LP-MOCVD,　have　been　tested　by　ECV　system.The　results　have　been　shown,that　the　doping　density　and　the　suface　of　GaP　layer　and　the　characteristics　of　the　LED　changed　with　the　growth　temperature　of　GaP　layers.　This　experience　can　be　used　for　the　fabrication　of　high-performance　AlGaInP　red　LED.

关键词：

Gallium phosphide Growth temperature III-V semiconductors Light emitting diodes Metallorganic chemical vapor deposition Organic chemicals Organometallics Semiconductor alloys

作者机构：

[ 1 ] [Luo, Shaojun]College of Electronic Information and Control Engineering, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
[ 2 ] [Deng, Jun]College of Electronic Information and Control Engineering, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
[ 3 ] [Li, Jianjun]College of Electronic Information and Control Engineering, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
[ 4 ] [Gao, Linchun]College of Electronic Information and Control Engineering, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
[ 5 ] [Chen, Rui]College of Electronic Information and Control Engineering, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China
[ 6 ] [Han, Jun]College of Electronic Information and Control Engineering, Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing, China

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电子邮件地址：

luoshaojun@emails.bjut.edu.cn

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