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作者:

You, Congya (You, Congya.) | Zhang, Guoqing (Zhang, Guoqing.) | Deng, Wenjie (Deng, Wenjie.) | Zhao, Chen (Zhao, Chen.) | An, Boxing (An, Boxing.) | Liu, Beiyun (Liu, Beiyun.) | Wang, Bo (Wang, Bo.) (学者:王波) | Yan, Hui (Yan, Hui.) | Liu, Danmin (Liu, Danmin.) (学者:刘丹敏) | Zhang, Yongzhe (Zhang, Yongzhe.) (学者:张永哲)

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EI Scopus SCIE

摘要:

The hybrid-induced photogating effect using colloidal quantum dots is usually utilized to optimize the performance of 2D-based photodetectors, where the 2D material is usually black phosphorus, transition metal dichalcogenides or graphene. However, the method of integrating a single-layer light absorber material with 2D materials for increasing the photoresponse has suffered from limited depletion width so it can hardly achieve our desired application. Here, we proposed a hybrid BP/lead sulfide quantum dot photodetector with a cascade-type energy band structure, which can greatly improve the performance of this photodetector compared with a single-layer absorber. This device can display a high responsivity of 1.1 x 10(7) A W-1, a high detectivity of 1.75 x 10(15) Jones, and a low noise equivalent power of 4.3 x 10(-7) pW Hz(-1/2) simultaneously. These results indicate that a cascade-type energy band structure is not only able to effectively enhance the performance of the hybrid BP/lead sulfide quantum dot photodetector but also has great potential for wide application in other 2D material-based optoelectronic devices.

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作者机构:

  • [ 1 ] [You, Congya]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Deng, Wenjie]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Zhao, Chen]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [An, Boxing]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Liu, Beiyun]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Wang, Bo]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Yan, Hui]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 8 ] [Zhang, Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 9 ] [You, Congya]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China
  • [ 10 ] [Zhang, Guoqing]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China
  • [ 11 ] [Deng, Wenjie]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China
  • [ 12 ] [Zhao, Chen]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China
  • [ 13 ] [An, Boxing]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China
  • [ 14 ] [Liu, Beiyun]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China
  • [ 15 ] [Wang, Bo]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China
  • [ 16 ] [Yan, Hui]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China
  • [ 17 ] [Liu, Danmin]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China
  • [ 18 ] [Zhang, Yongzhe]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China
  • [ 19 ] [Zhang, Guoqing]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing, Peoples R China
  • [ 20 ] [Liu, Danmin]Beijing Univ Technol, Inst Microstruct & Property Adv Mat, Beijing, Peoples R China

通讯作者信息:

  • 张永哲

    [Zhang, Yongzhe]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China;;[Zhang, Yongzhe]Minist Educ China, Key Lab Adv Funct Mat, Beijing, Peoples R China

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来源 :

JOURNAL OF MATERIALS CHEMISTRY C

ISSN: 2050-7526

年份: 2019

期: 8

卷: 7

页码: 2232-2239

6 . 4 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:211

JCR分区:1

被引次数:

WoS核心集被引频次: 18

SCOPUS被引频次: 19

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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