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作者:

Zhu, Cheng (Zhu, Cheng.) | Niu, Xiuxiu (Niu, Xiuxiu.) | Fu, Yuhao (Fu, Yuhao.) | Li, Nengxu (Li, Nengxu.) | Hu, Chen (Hu, Chen.) | Chen, Yihua (Chen, Yihua.) | He, Xin (He, Xin.) | Na, Guangren (Na, Guangren.) | Liu, Pengfei (Liu, Pengfei.) | Zai, Huachao (Zai, Huachao.) | Ge, Yang (Ge, Yang.) | Lu, Yue (Lu, Yue.) (学者:卢岳) | Ke, Xiaoxing (Ke, Xiaoxing.) | Bai, Yang (Bai, Yang.) | Yang, Shihe (Yang, Shihe.) | Chen, Pengwan (Chen, Pengwan.) | Li, Yujing (Li, Yujing.) | Sui, Manling (Sui, Manling.) (学者:隋曼龄) | Zhang, Lijun (Zhang, Lijun.) | Zhou, Huanping (Zhou, Huanping.) | Chen, Qi (Chen, Qi.)

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摘要:

The mixed halide perovskites have emerged as outstanding light absorbers for efficient solar cells. Unfortunately, it reveals inhomogeneity in these polycrystalline films due to composition separation, which leads to local lattice mismatches and emergent residual strains consequently. Thus far, the understanding of these residual strains and their effects on photovoltaic device performance is absent. Herein we study the evolution of residual strain over the films by depth-dependent grazing incident X-ray diffraction measurements. We identify the gradient distribution of in-plane strain component perpendicular to the substrate. Moreover, we reveal its impacts on the carrier dynamics over corresponding solar cells, which is stemmed from the strain induced energy bands bending of the perovskite absorber as indicated by first-principles calculations. Eventually, we modulate the status of residual strains in a controllable manner, which leads to enhanced PCEs up to 20.7% (certified) in devices via rational strain engineering.

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作者机构:

  • [ 1 ] [Zhu, Cheng]Beijing Inst Technol, Sch Mat Sci & Engn, Adv Mat Expt Ctr, Beijing Key Lab Construct Tailorable Adv Funct Ma, Beijing 100081, Peoples R China
  • [ 2 ] [Liu, Pengfei]Beijing Inst Technol, Sch Mat Sci & Engn, Adv Mat Expt Ctr, Beijing Key Lab Construct Tailorable Adv Funct Ma, Beijing 100081, Peoples R China
  • [ 3 ] [Bai, Yang]Beijing Inst Technol, Sch Mat Sci & Engn, Adv Mat Expt Ctr, Beijing Key Lab Construct Tailorable Adv Funct Ma, Beijing 100081, Peoples R China
  • [ 4 ] [Li, Yujing]Beijing Inst Technol, Sch Mat Sci & Engn, Adv Mat Expt Ctr, Beijing Key Lab Construct Tailorable Adv Funct Ma, Beijing 100081, Peoples R China
  • [ 5 ] [Chen, Qi]Beijing Inst Technol, Sch Mat Sci & Engn, Adv Mat Expt Ctr, Beijing Key Lab Construct Tailorable Adv Funct Ma, Beijing 100081, Peoples R China
  • [ 6 ] [Fu, Yuhao]Jilin Univ, Key Lab Automobile Mat MOE, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China
  • [ 7 ] [He, Xin]Jilin Univ, Key Lab Automobile Mat MOE, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China
  • [ 8 ] [Na, Guangren]Jilin Univ, Key Lab Automobile Mat MOE, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China
  • [ 9 ] [Zhang, Lijun]Jilin Univ, Key Lab Automobile Mat MOE, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China
  • [ 10 ] [Fu, Yuhao]Jilin Univ, Sch Mat Sci & Engn, Changchun 130012, Jilin, Peoples R China
  • [ 11 ] [He, Xin]Jilin Univ, Sch Mat Sci & Engn, Changchun 130012, Jilin, Peoples R China
  • [ 12 ] [Na, Guangren]Jilin Univ, Sch Mat Sci & Engn, Changchun 130012, Jilin, Peoples R China
  • [ 13 ] [Zhang, Lijun]Jilin Univ, Sch Mat Sci & Engn, Changchun 130012, Jilin, Peoples R China
  • [ 14 ] [Li, Nengxu]Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
  • [ 15 ] [Chen, Yihua]Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
  • [ 16 ] [Zhou, Huanping]Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
  • [ 17 ] [Hu, Chen]Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
  • [ 18 ] [Yang, Shihe]Hong Kong Univ Sci & Technol, Dept Chem, Kowloon, Clear Water Bay, Hong Kong, Peoples R China
  • [ 19 ] [Zai, Huachao]China Univ Petr, Coll Sci, Dept Mat Sci & Engn, Beijing 102249, Peoples R China
  • [ 20 ] [Ge, Yang]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 21 ] [Lu, Yue]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 22 ] [Ke, Xiaoxing]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 23 ] [Sui, Manling]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 24 ] [Yang, Shihe]Peking Univ, Shenzhen Grad Sch, Sch Chem Biol & Biotechnol, Guangdong Key Lab Nano Micro Mat Res, Shenzhen 518055, Guangdong, Peoples R China
  • [ 25 ] [Chen, Pengwan]Beijing Inst Technol, State Key Lab Explos Sci & Technol, Beijing 100081, Peoples R China

通讯作者信息:

  • [Chen, Qi]Beijing Inst Technol, Sch Mat Sci & Engn, Adv Mat Expt Ctr, Beijing Key Lab Construct Tailorable Adv Funct Ma, Beijing 100081, Peoples R China;;[Zhang, Lijun]Jilin Univ, Key Lab Automobile Mat MOE, State Key Lab Superhard Mat, Changchun 130012, Jilin, Peoples R China;;[Zhang, Lijun]Jilin Univ, Sch Mat Sci & Engn, Changchun 130012, Jilin, Peoples R China;;[Zhou, Huanping]Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China

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来源 :

NATURE COMMUNICATIONS

ISSN: 2041-1723

年份: 2019

卷: 10

1 6 . 6 0 0

JCR@2022

ESI学科: Multidisciplinary;

ESI高被引阀值:255

JCR分区:1

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WoS核心集被引频次: 705

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