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作者:

Li, Tao (Li, Tao.) | Han, Jun (Han, Jun.) | Xing, Yanhui (Xing, Yanhui.) | Deng, Xuguang (Deng, Xuguang.) | Li, Junshuai (Li, Junshuai.) | Zhang, Li (Zhang, Li.) | Shi, Fengfeng (Shi, Fengfeng.) | Yu, Lun (Yu, Lun.) | Sun, Chi (Sun, Chi.) | Zhang, Xiaodong (Zhang, Xiaodong.) | Zhang, Baoshun (Zhang, Baoshun.)

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EI Scopus SCIE

摘要:

Preferred (002)-oriented aluminium nitride (AlN) films by direct-current (DC) magnetron sputtering on Si (100) substrate were prepared at various deposition pressure (0.12-0.5 Pa). The influence of pressure on the surface morphology, crystal structure and optical properties of AlN thin films was discussed the with the methods of X-ray diffraction, atomic force microscopy and stress analyser, respectively. Optical properties were studied by ellipsometer and Fourier transform infrared spectrometer. It was observed that the AlN films tended to be preferred (002)-oriented when the pressure was decreased and the value of full width at half maximum is 0.325 degrees when the pressure was kept at 0.12 Pa. the tensile stress, refractive index, and the density of Al-N bonds decreased with increasing the sputtering pressure from 0.12 to 0.5 Pa. This work demonstrated the influence of sputtering pressure on the structural and optical properties of the AlN films deposited on Si (100) substrate, the gallium nitride epitaxial film on Si (100) substrate was expected to be realised using sputtered AlN as the buffer layer.

关键词:

surface morphology crystal structure sputter deposition ellipsometry 12 Pa to 0 stress analyser Si silicon Fourier transform infrared spectra semiconductor growth DC reactive magnetron sputtering aluminium compounds deposition pressure semiconductor epitaxial layers sputtered coatings III-V semiconductors Fourier transform infrared spectrometer atomic force microscopy pressure 0 direct-current magnetron sputtering ellipsometer buffer layers tensile stress (002)-oriented aluminium nitride films wide band gap semiconductors AlN films X-ray diffraction sputtering pressure gallium compounds gallium nitride epitaxial film Si (100) substrate refractive index 5 Pa AlN

作者机构:

  • [ 1 ] [Li, Tao]Beijing Univ Technol, Dept Informat, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Han, Jun]Beijing Univ Technol, Dept Informat, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Xing, Yanhui]Beijing Univ Technol, Dept Informat, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Shi, Fengfeng]Beijing Univ Technol, Dept Informat, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Li, Tao]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
  • [ 6 ] [Deng, Xuguang]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
  • [ 7 ] [Li, Junshuai]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
  • [ 8 ] [Zhang, Li]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
  • [ 9 ] [Shi, Fengfeng]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
  • [ 10 ] [Yu, Lun]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
  • [ 11 ] [Sun, Chi]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
  • [ 12 ] [Zhang, Xiaodong]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
  • [ 13 ] [Zhang, Baoshun]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China
  • [ 14 ] [Zhang, Baoshun]Suzhou Powerhouse Elect Co Ltd, Suzhou 215123, Peoples R China

通讯作者信息:

  • [Han, Jun]Beijing Univ Technol, Dept Informat, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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来源 :

MICRO & NANO LETTERS

ISSN: 1750-0443

年份: 2019

期: 2

卷: 14

页码: 146-149

1 . 3 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:123

被引次数:

WoS核心集被引频次: 13

SCOPUS被引频次: 15

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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