This　paper　aims　to　contribute　to　the　understanding　of　laser　irradiation　effect　on　the　electric　and　photoluminescence　(PL)　properties,　surface　morphology　of　ZnO　thin　films.　By　optimizing　the　laser　beam　quality　and　optical　system,　with　changing　the　laser　parameters,　the　carrier　concentration　and　UV　PL　intensity　of　ZnO　thin　films　could　be　increased　and　modulated　in　a　wide　range.　At　a　moderate　laser　energy　density,　compared　with　the　as　grown　ZnO　films,　the　irradiated　sample　exhibits　a　series　of　desirable　properties:　UV　emission　is　distinctly　higher,　resistivity　is　decreased　by　three　orders　of　magnitude,　the　surface　is　flat　and　smooth,　and　at　the　same　time,　it　maintains　good　epitaxial　orientation　and　wurtzite　crystal　lattice　structure.　It　is　notable　that　the　desirable　properties　could　be　obtained　in　several　dozens　of　seconds.　Combined　with　post　annealing　treatments　and　X-ray　photoelectron　spectroscopy　(XPS),　X-ray　diffraction　(XRD),　atomic　force　microscopy,　Hall　measurement,　room　temperature　UV　PL　and　Raman　spectra　analysis,　possible　mechanisms　of　KrF　laser　irradiation　effect　on　ZnO　thin　films　are　discussed.