Tantalum-pentoxide　(Ta2O5)　is　considered　as　a　promising　nonsilicon　oxide　dielectric　for　practical　application　in　the　field　of　microelectronic.　It　has　been　reported　that　the　physical　properties　of　the　Ta2O5　ceramics　can　be　improved　by　laser　irradiation.　In　the　present　work,　a　finite-element　model　is　developed　to　exploring　the　reason　of　the　improvement　by　analyzing　the　temperature　field　during　laser　irradiation　of　Ta2O5　ceramics.　The　results　of　the　model　were　tested　by　experimental　and　confirmed　by　temperature　measurements.　The　model　allows　for　the　non-linear　behavior　of　thermal　conductivity　and　of　specific　heat　due　to　temperature　changes.　The　final　steady-state　temperature　is　reached　after　about　75　seconds.　The　peak　temperatures　are　decreased　with　the　increase　of　the　sample　thickness,　whereas　the　temperature　gradient　does　not　change　identically.　The　simulation　results　show　the　characteristics　of　the　temperature　field　during　laser　irradiation　Ta2O5　ceramic,　which　can　be　used　for　analyzing　the　reason　of　the　strong　enhancement　of　the　dielectric　permittivity.