In　order　to　overcome　the　intrinsic　difficulties　in　conventional　GaAs/AlGaAs　multi-quantum　well　infrared　photodetectors(QWIPs),　such　as　small　photocurrent,　big　dark　current　and　low　response　speed,　a　novel　tunneling　compensation　QWIPs　structure　is　proposed　in　this　paper.　Based　on　static　Boltzmann　Equation　and　Equilibrium　Equation,　considering　scattering　of　the　ionized　impurity　and　the　optical　vibration,　the　transportation　process　of　carriers　have　been　simulated　at　low　temperature.　The　device　is　in　anti-bias　state　when　adding　bias,　each　periodic　unit＇s　maximum　voltage　is　about　1.5V.　Because　of　big　resistance　the　intrinsic　type　AlGaAs　have　large　voltage,　which　is　about　1.3V.　When　electrons　transport　in　the　depletion　region　and　the　N-type　GaAs,　the　transportation　time　is　less　than　the　electron　momentum　relaxation　time.　The　scattering　mechanisms　have　not　yet　occurred,　and　consequently　only　the　perturbation　due　to　the　electric　field　is　observed.　Each　carrier　is　shifted　the　same　amount　in　the　direction　of　the　field.　Then,　only　a　rigid　shift　of　the　initial　distribution　function,　proportional　to　the　elapsed　time　and　to　the　electric　field　value,　will　occur.　The　velocity　of　all　carriers　along　the　field　direction,　and　in　turn　the　drift　velocity,　increases　linearly　with　time　so　that　that　a　high　value　of　the　drift　velocity　can　be　achieved.　The　result　show　that　carriers　in　the　novel　structure,　which　transported　ballistically　through　the　region　of　quantum　well　accelerated　by　the　large　build-in　electric　field,　have　more　higher　transportation　speed　and　more　longer　lifetime　relative　to　the　conventional　QWIPs　structure.　Due　to　empty　states　of　the　subband　in　quantum　well　region,　which　was　generated　by　incident　infrared　light,　will　be　filled　by　tunneling　mechanism,　it　should　be　expected　that　the　photocurrent　would　increase　with　the　numbers　of　quantum　wells　step　by　step　in　the　novel　structure,　otherwise　another　characteristic　would　be　expected　that　the　absorb　wavelength　of　the　photodetector　is　tunable　by　different　bias　level.　©　2009　SPIE.