Study on the reliability of NilAulAIGaN/GaN HEMTs at high temperature - 文章详情页

作者：

Li, Fei (Li, Fei.) | Zhang, Xiaoling (Zhang, Xiaoling.) | Lu, Changzhi (Lu, Changzhi.) | Wang, Yuanchun (Wang, Yuanchun.) | Yuan, Qiuchen (Yuan, Qiuchen.)

收录：

EI Scopus

摘要：

Fundamentals　of　current　transports　of　the　NiJAu/AIGaN/GaN　HEMTs　have　been　studied　under　the　temperature　between　27C　and　250C.　It＇s　found　that　the　maximum　drain-source　current　(IDS)　decreases　with　rising　temperature,　and　the　temperature　dependent　of　IDS　has　a　negative　coefficient　of　-O.314mAlmm°C.　The　decrease　in　mobility　is　considered　to　be　the　main　cause　of　this　deterioration.　It＇s　also　found　that　a　rise　in　temperature　accompanies　an　increase　in　barrier　height　and　a　decrease　in　ideality　factor.　The　remarkable　finding　is　that　reverse　leakage　current　increases　first　and　thendecreases　with　rising　temperature.　©2009　IEEE.

关键词：

Failure analysis High electron mobility transistors Deterioration Integrated circuits Drain current Failure (mechanical)

作者机构：

[ 1 ] [Li, Fei]Beijing University of Technology, School of Electronic Information and Control Engineering, Beijing, China
[ 2 ] [Zhang, Xiaoling]Beijing University of Technology, School of Electronic Information and Control Engineering, Beijing, China
[ 3 ] [Lu, Changzhi]Beijing University of Technology, School of Electronic Information and Control Engineering, Beijing, China
[ 4 ] [Wang, Yuanchun]Beijing University of Technology, School of Electronic Information and Control Engineering, Beijing, China
[ 5 ] [Yuan, Qiuchen]Beijing University of Technology, School of Electronic Information and Control Engineering, Beijing, China

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