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摘要:
Based on traditional transmission line method (TLM), an improved method was used to investigate the failure mechanism of n-GaNlTilAl/NilAu ohmic contact under high-current density (>10sA/cm2). A novel structure is proposed and fabricated. The degradation of the ohmic contact was studied by the novel structure. According to analyzing the energy spectrum of the sample before and after degradation, it is concluded that Aluminium diffusion is the main factor that destroyed the good ohmic contact. ©2009 IEEE.
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年份: 2009
页码: 460-463
语种: 英文
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