Internal　transparent　collector　(ITC)　insulated　gate　bipolar　transistor　(IGBT)　is　a　new　type　IGBT.　Its　structure　is　quite　similar　to　that　of　the　PT-IGBT,　but　a　very　low　carrier　lifetime　control　region　(LCLCR)　is　introduced　in　the　collector　region　near　the　p-collector/n-buffer　junction.　In　this　paper,　an　analysis　model　for　ITC-IGBT　is　proposed.　The　collector　current　density　is　given.　It　is　function　of　carrier　injected　level,　device　physical　parameters　(carrier　diffusion　coefficient,　diffusion　length),　and　technology　parameters　(Doping　level,　base　width,　and　position　of　LCLCR).　The　influence　of　the　position　of　LCLCR,　as　well　as　carrier　lifetime　in　it,　on　device＇s　characteristics　are　discussed.　For　certain　current　density,　if　carrier　lifetime　in　LCLCR　is　less　than　0.01ns,　and　LCLCR　is　localized　at　0.9μm　away　from　base/collector　junction,　hole　injection　level　decreases　with　temperature.　Considering　the　mobility　also　decreases　with　temperature,　device＇s　on-state　voltage　V　ON　will　have　positive　temperature　coefficient.　The　device　is　rugged;　If　carrier　lifetime　in　LCLCR　is　about　1ns,　and　LCLCR　is　just　under　base/collector　junction,　the　hole　injection　level　increase　with　temperature.　Even　if　the　mobility＇s　decrease　with　temperature　can　not　compensate　the　reduction　of　VON,　the　decrease　degree　of　VON　is　much　less　than　that　of　PT-IGBT.　The　device　is　more　rugged　than　PT-IGBT.　Optimum　the　position　and　carrier　lifetime　of　LCLCR　can　make　the　device　either　rugged　or　less　temperature　sensitive　(VON　increase　little　with　temperature).　The　position　and　carrier　lifetime　of　LCLCR　also　plays　important　role　for　device＇s　turn-off　feature.　When　the　position　of　LCLCR　is　settled,　the　lower　carrier　lifetime　in　LCLCR　is,　the　shorter　falling　time　will　be.　But　when　carrier　lifetime　in　LCLCR　is　less　than　10ps,　the　falling　time　is　seldom　influenced　by　the　carrier　lifetime　in　LCLCR.　Further　reduction　of　turn-off　time　can　be　obtained　by　reducing　the　distance　of　LCLCR　to　the　collector/base　junction.　©2009　IEEE.