This　paper　presents　an　inductorless　SiGe　HBT　low　noise　amplifier　(LNA)　using　JAZZ　O.35μm　SiGe　BiCMOS　technology.　The　LNA　is　designed　with　multiple　resistive　feedback　structure.　In　addition,　peaking　capacitors　at　both　emitters　were　adopted　to　compensate　for　the　gain　rolloff　at　higher　frequency.　The　results　of　simulation　show　that　the　LNA　has　over　22.3dB　gain　with　less　than　idB　variation,　noise　figure　varies　between　2.4　to　3.3dB,　and　input　and　output　reflections　(S11　and　S22)　are　both　less　than　-12dB　over　the　entire　band.　The　entire　results　exhibit　the　LNA　has　good　performance.　The　key　advantage　of　this　work　is　the　elimination　of　inductors　thus　the　chip　area　can　be　greatly　saved,　which　is　clearly　an　attractive　benefit.　©2009　IEEE.