A novel 3-5 GHz low noise amplifier using an active inductor - 文章详情页

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This　paper　presents　a　novel　3-5　GHz　SiGe　HBT　low　noise　amplifier　(LNA)　using　an　active　inductor.　The　use　of　active　inductor　instead　of　passive　inductor　can　greatly　reduce　the　chip　area.　The　active　inductor　compensates　the　decrease　of　gain　of　the　amplifier　and　improves　the　gain　flatness　in　the　high-frequency　band.　The　simulation　results　show　the　LNA　has　gain　(S21)　of　24.856　dB　with　0.056　dB　variation　over　the　3　GHz　to　5　GHz　band.　The　matched　input　and　output　reflectance　(S11　and　S22)　are　less　than　-18　dB　and　-14　dB,　respectively.　In　additon,　LNA　is　unconditionally　stable　over　the　entire　band.

关键词：

Computational electromagnetics Electric inductors Feedback Heterojunction bipolar transistors High frequency amplifiers Low noise amplifiers Microwave devices Si-Ge alloys

作者机构：

[ 1 ] [You, Yunxia]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 2 ] [Zhang, Wanrong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 3 ] [Xie, Hongyun]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 4 ] [Shen, Pei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 5 ] [Huang, Yiwen]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 6 ] [Huang, Lu]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China
[ 7 ] [Sun, Botao]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100124, China

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