Improved thermal stability of power SiGe heterojunction bipolar transistor with novel emitter structure - 文章详情页

作者：

Hu, Ning (Hu, Ning.) | Zhang, Wan-Rong (Zhang, Wan-Rong.) | Chen, Liang (Chen, Liang.) | Huang, Lu (Huang, Lu.) | Huang, Yi-Wen (Huang, Yi-Wen.)

收录：

CPCI-S EI Scopus

摘要：

A　novel　segmented　emitter　structure　with　nonuniform　finger　length　and　spacing　has　been　presented　to　alleviate　adverse　thermal　effects　in　multi-finger　SiGe　BET　power　device.　Considering　the　various　thermal　resistances　of　different　components　for　the　segmented　multi-finger　BET,　an　appropriate　thermal　model　is　developed.　Using　this　model,　the　thermal　simulation　for　a　ten-finger　power　SiGe　BET　with　segmented　emitter　structure　is　performed　and　the　three-dimensional　temperature　distribution　on　emitter　fingers　is　obtained.　Compared　with　traditional　emitter　structure,　the　maximum　junction　temperature　reduce　significantly　from　416.3K　to　405K,　the　thermal　resistance　reduce　from　154.67K/W　to　140K/W,　thus　the　thermal　stability　of　improved　structure　is　enhanced　apparently.　©2009　IEEE.

关键词：

Si-Ge alloys Heterojunction bipolar transistors Thermodynamic stability Heterojunctions

作者机构：

[ 1 ] [Hu, Ning]College of Electronic Information and Control Engineering, Beijing University of Technology(BJUT), Beijing, 100124, China
[ 2 ] [Zhang, Wan-Rong]College of Electronic Information and Control Engineering, Beijing University of Technology(BJUT), Beijing, 100124, China
[ 3 ] [Chen, Liang]College of Electronic Information and Control Engineering, Beijing University of Technology(BJUT), Beijing, 100124, China
[ 4 ] [Huang, Lu]College of Electronic Information and Control Engineering, Beijing University of Technology(BJUT), Beijing, 100124, China
[ 5 ] [Huang, Yi-Wen]College of Electronic Information and Control Engineering, Beijing University of Technology(BJUT), Beijing, 100124, China

通讯作者信息：

电子邮件地址：

huningo@emails.bjut.edu.cn

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