A study on the Cl2/C2H4/Ar plasma etching of ITO using inductively coupled plasma - 文章详情页

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In　this　study,　the　indium　tin　oxide　(ITO)　was　etched　by　an　inductively　coupled　plasma　(ICP)　etcher　using　Cl2/C2H4/Ar　as　the　etching　gases.　A　detailed　study　on　the　samples　etched　in　different　parameters　was　performed.　©　2009　Optical　Society　of　America.

关键词：

Chlorine compounds Inductively coupled plasma Photonics Plasma etching Tin oxides

作者机构：

[ 1 ] [Fang, Rong]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Guo, Xia]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Jiang, Wen Jing]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Guo, Yu Han]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Qin, Yuan]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Shen, Guang Di]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Han, Jin Ru]Beijing Optoelectronic Technology Laboratory, Institute of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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