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[会议论文]

Accessing the epitaxy structure of quantum well infrared photodetectors by photoluminescence measurement

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Author:

Ma, Nan (Ma, Nan.) | Deng, Jun (Deng, Jun.) | Li, Dingyuan (Li, Dingyuan.) | Unfold

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Abstract:

In this paper, several samples of GaAs/AlGaAs multiple quantum well material with different parameters are present, the measurement result using photoluminescence(PL) spectroscopy shows the energy between the ground state in valence band and the ground state in conduction band of the well for each sample. Through transfer matrix method (TTM), we obtain bound state eigenvalues, and the corresponding eigenfunctions of arbitrarily graded in one-dimensional potential wells. With theoretical calculation, the peak response wavelength of the QWIP is determined. The calculated result is coincident with the one from photocurrent spectrum for the same sample very well. The comparison of theory and experiment confirms that PL scan is an important testing method for the quality of material. © 2009 SPIE.

Keyword:

III-V semiconductors Transfer matrix method Infrared detectors Ground state Modulators Quantum theory Testing Photoluminescence Thermography (imaging) Eigenvalues and eigenfunctions Photodetectors Gallium arsenide Semiconductor quantum wells Quantum well infrared photodetectors Infrared radiation Photoluminescence spectroscopy

Author Community:

  • [ 1 ] [Ma, Nan]Beijing Optoelectronics Technology, Beijing University of Technology, Beijing, 100022, China
  • [ 2 ] [Deng, Jun]Beijing Optoelectronics Technology, Beijing University of Technology, Beijing, 100022, China
  • [ 3 ] [Li, Dingyuan]Beijing Optoelectronics Technology, Beijing University of Technology, Beijing, 100022, China
  • [ 4 ] [Shi, Yanli]Kunming Institute of Physics, Yunnan Kunming, 650023, China
  • [ 5 ] [Shen, Guangdi]Beijing Optoelectronics Technology, Beijing University of Technology, Beijing, 100022, China

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ISSN: 0277-786X

Year: 2009

Volume: 7383

Language: English

Cited Count:

WoS CC Cited Count: 0

30 Days PV: 2

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