Accessing the epitaxy structure of quantum well infrared photodetectors by photoluminescence measurement - 文章详情页

作者：

Ma, Nan (Ma, Nan.) | Deng, Jun (Deng, Jun.) | Li, Dingyuan (Li, Dingyuan.) | Shi, Yanli (Shi, Yanli.) | Shen, Guangdi (Shen, Guangdi.)

收录：

EI Scopus

摘要：

In　this　paper,　several　samples　of　GaAs/AlGaAs　multiple　quantum　well　material　with　different　parameters　are　present,　the　measurement　result　using　photoluminescence(PL)　spectroscopy　shows　the　energy　between　the　ground　state　in　valence　band　and　the　ground　state　in　conduction　band　of　the　well　for　each　sample.　Through　transfer　matrix　method　(TTM),　we　obtain　bound　state　eigenvalues,　and　the　corresponding　eigenfunctions　of　arbitrarily　graded　in　one-dimensional　potential　wells.　With　theoretical　calculation,　the　peak　response　wavelength　of　the　QWIP　is　determined.　The　calculated　result　is　coincident　with　the　one　from　photocurrent　spectrum　for　the　same　sample　very　well.　The　comparison　of　theory　and　experiment　confirms　that　PL　scan　is　an　important　testing　method　for　the　quality　of　material.　©　2009　SPIE.

关键词：

Eigenvalues and eigenfunctions Gallium arsenide Ground state III-V semiconductors Infrared detectors Infrared radiation Modulators Photodetectors Photoluminescence Photoluminescence spectroscopy Quantum theory Quantum well infrared photodetectors Semiconductor quantum wells Testing Thermography (imaging) Transfer matrix method

作者机构：

[ 1 ] [Ma, Nan]Beijing Optoelectronics Technology, Beijing University of Technology, Beijing, 100022, China
[ 2 ] [Deng, Jun]Beijing Optoelectronics Technology, Beijing University of Technology, Beijing, 100022, China
[ 3 ] [Li, Dingyuan]Beijing Optoelectronics Technology, Beijing University of Technology, Beijing, 100022, China
[ 4 ] [Shi, Yanli]Kunming Institute of Physics, Yunnan Kunming, 650023, China
[ 5 ] [Shen, Guangdi]Beijing Optoelectronics Technology, Beijing University of Technology, Beijing, 100022, China

通讯作者信息：

电子邮件地址：

manna@bjut.edu.cn

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