Silicon　is　a　kind　of　excellent　semiconductor　material　and　is　one　of　the　core　material　of　microelectronics.　But　it　is　not　a　fine　luminescent　material.　The　photoluminescence(PL)　will　be　obtained　by　excitation　only　when　the　size　of　silicon　partials　reduced　to　a　certain　value.　Nanocrystalline　silicon　films　have　special　structure　and　many　excellent　optoelectronic　properties　and　are　supposed　to　be　applied　in　optoelectronic　devices　and　large　scale　integrated　circuits.　In　this　paper,　Nanocrystalline　silicon　films　was　deposited　on　silicon　substrate　by　RF　magnetron　sputtering　with　pure　Si　target.　and　the　working　gas　is　the　mixture　of　oxygen　and　argon　.The　content　of　O2　in　working　gas　(O2/　O2　+　Ar)　and　the　power　of　sputtering　were　changed　separately　.However,　the　substrate　temperature,　working　gas　pressure　and　other　conditions　were　definite.　After　annealing　in　the　stove,　we　got　the　Nanocrystalline　silicon　particles　in　the　thin　films.　Fourier　transform　infrared(FTIR)　transmittance　measurement　was　carried　out　to　characterized　Nanocrystalline　silicon　films.　X-ray　photoelectron　spectroscopy　(XPS)　measurement　was　also　performed　to　estimate　the　atom　ratio　of　the　Nanocrystalline　silicon　films.　Raman　scattering　measurements　was　also　taken　in　to　characterize　the　Nanocrystalline　silicon　films.　The　formation　of　Nanocrystalline　silicon　filmswere　depended　partly　on　the　parameters　of　experiment.　The　annealed　silicon　films　were　researched　that　the　size　of　the　Nanocrystalline　silicon　particles　proved　to　be　largely　impacted　by　the　annealing　temperature　in　the　thin　film.　©　2009　SPIE.