Thermal conductivity studies of a GaN-sapphire structure by combined scanning thermal microscopy and electron backscatter diffraction - 文章详情页

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摘要：

Scanning　thermal　microscope　(SThM)　and　electron　backscatter　diffraction　(EBSD)　techniques　were　used　to　investigate　the　local　thermal-conductivity　of　a　GaN-buffer-sapphire　heterostructure.　Compared　with　GaN　epilayer,　buffer　layer　displayed　the　low　thermal-conductivity　and　the　high　strain　state　due　to　the　lattice　distortion.　©2009　IEEE.

关键词：

III-V semiconductors Sapphire Failure (mechanical) Integrated circuits Strain Buffer layers Gallium nitride Electron diffraction Failure analysis Backscattering Thermal conductivity

作者机构：

[ 1 ] [Zhang, Y.F.]Institute of Microstructure, Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wang, L.]Institute of Microstructure, Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Ji, Y.]Institute of Microstructure, Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Han, X.D.]Institute of Microstructure, Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Zhang, Z.]Institute of Microstructure, Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Heiderhoff, R.]Department of Electronics, Faculty of Electrical, University of Wuppertal, Rainer-Gruenter-Str. 21, Wuppertal D-42119, Germany
[ 7 ] [Tiedemann, A.-K.]Department of Electronics, Faculty of Electrical, University of Wuppertal, Rainer-Gruenter-Str. 21, Wuppertal D-42119, Germany
[ 8 ] [Balk, L.J.]Department of Electronics, Faculty of Electrical, University of Wuppertal, Rainer-Gruenter-Str. 21, Wuppertal D-42119, Germany

通讯作者信息：

[ji, y.]institute of microstructure, property of advanced materials, beijing university of technology, beijing 100124, china

电子邮件地址：

jiyuan@bjut.edu.cn

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