Modeling of internal transparent collector IGBTs and the extraction of electron lifetime in nano-voids layer - 文章详情页

作者：

Hu, D.Q. (Hu, D.Q..) | Wu, Y. (Wu, Y..) | Kang, B.W. (Kang, B.W..) | Jia, Y.P. (Jia, Y.P..) | Sin, Johnny K.O. (Sin, Johnny K.O..)

收录：

EI Scopus

摘要：

A　new　type　of　insulated　gate　bipolar　transistor　(IGBT)　-　internal　transparent　collector　(ITC)　IGBT　is　proposed.　It　is　quite　similar　to　that　of　the　PT-IGBT,　but　a　very　low　carrier　lifetime　control　region　is　introduced　in　the　P+　substrate　near　the　p-collector/n-buffer　junction.　Based　on　quasi-static　hypothesis,　the　ITC-IGBTs＇　static　characteristic　equations　are　given.　The　turn-off　equations　are　also　derived　on　base　of　non-quasi-static　analysis.　The　model　is　used　to　our　fabricated　device　structure　and　the　results　fit　well　to　the　experiment　results.　Based　on　the　relationship　of　Von　and　local　carrier　lifetime,　electron　lifetime　in　carrier　lifetime　control　region　is　deduced.　They　are　at　range　of　0.2-30　nanoseconds.　The　static　performance　as　well　as　turn-off　loses　of　ITC-IGBT　is　compared　to　PT-　and　FS-IGBT.　The　ITC-IGBT　shows　good　potential　for　600V　IGBT　applications.　©　2009　IEEE.

关键词：

Carrier lifetime Energy conversion Insulated gate bipolar transistors (IGBT)

作者机构：

[ 1 ] [Hu, D.Q.]Dept. of Electronic Sci. and Tech., Beijing University of Technology, 100, Pingleyuan, Chaoyang District, Beijing, China
[ 2 ] [Wu, Y.]Dept. of Electronic Sci. and Tech., Beijing University of Technology, 100, Pingleyuan, Chaoyang District, Beijing, China
[ 3 ] [Kang, B.W.]Dept. of Electronic Sci. and Tech., Beijing University of Technology, 100, Pingleyuan, Chaoyang District, Beijing, China
[ 4 ] [Jia, Y.P.]Dept. of Electronic Sci. and Tech., Beijing University of Technology, 100, Pingleyuan, Chaoyang District, Beijing, China
[ 5 ] [Sin, Johnny K.O.]Dept. of Electronics and Computer Engineering, Hong Kong University of Sci. and Tech., Clear Water Bay, Kowloon, Hong Kong

通讯作者信息：

电子邮件地址：

hudongqing@bjut.edu.cn

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