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A UWB LNA (low noise amplifier) based on 0.35m SiGe BiCMOS technology is presented in this paper. This LNA adopts a resistance feedback topology to optimize the gain and noise figure. The serial inductance at the base is used to matching input impedance and decreasing group delay variation. The simulation results indicate that the gain of LNA reaches 12.5dB with the variation of 1.9dB and the power consuming is 6.3mW in full band from 3.1GHz to 10.6GHz. This SiGe UWB LNA exhibits less than 5ps group delay variation and less than 3.85dB NF over the entire band. © 2008 IEEE.
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年份: 2008
页码: 1500-1503
语种: 英文
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