Optimum design of multi-finger SiGe HBT with non-uniform length for power application - 文章详情页

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EI Scopus

摘要：

With　a　three-dimensional　thermal-electrical　model,　a　non-uniform　emitter　length　structure　in　multi-finger　SiGe　heterojunction　bipolar　transistors　(HBTs)　is　presented　to　improve　thermal　stability.　Compared　with　the　traditional　uniform　emitter　length　design,　the　peak　temperature　of　multifinger　SiGe　HBT　with　non-uniform　length　is　lowered.　Therefore,　it　can　operate　at　large　current　and　has　a　higher　power　handling　capability　in　power　application.　©　2008　IEEE.

关键词：

Si-Ge alloys Silicon Heterojunctions Heterojunction bipolar transistors

作者机构：

[ 1 ] [Ning, Hu]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 2 ] [Wan-Rong, Zhang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 3 ] [Dong-Yue, Jin]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 4 ] [Hong-Yun, Xie]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 5 ] [Lu, Huang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 6 ] [Yi-Wen, Huang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 7 ] [Pei, Shen]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 8 ] [Jia, Li]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China
[ 9 ] [Jun-Ning, Gan]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, China

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电子邮件地址：

huningo@emails.bjut.edu.cn

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