Multi-finger power SiGe HBTs with non-uniform Spacing - 文章详情页

作者：

Jin, Dong-Yue (Jin, Dong-Yue.) | Zhang, Wan-Rong (Zhang, Wan-Rong.) | Xie, Hong-Yun (Xie, Hong-Yun.) | Wang, Yang (Wang, Yang.)

收录：

EI Scopus

摘要：

Based　on　a　three-dimensional　thermal-electrical　model,　non-uniform　finger　spacing　power　SiGe　HBT　was　designed　and　fabricated.　Experiment　result　shows　that　the　peak　temperature　of　non-uniform　spacing　SiGe　HBT　is　lowed　by　22K　compared　with　that　of　uniform　space　HBT.　For　the　same　non-uniform　spacing　HBT,　temperature　non-uniformity　among　the　fingers　is　improved　obviously　at　different　biases.　The　higher　power　dissipation　PDC　is,　the　better　temperature　improvement　of　non-uniform　spacing　HBT　is.　Because　of　the　reducing　of　peak　temperature,　power　SiGe　HBTs　with　non-uniform　Spacing　can　work　at　higher　bias　and　has　higher　power　handling　capability.

关键词：

Thermal effects Silicon compounds Energy dissipation Heterojunction bipolar transistors

作者机构：

[ 1 ] [Jin, Dong-Yue]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 2 ] [Zhang, Wan-Rong]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Xie, Hong-Yun]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Wang, Yang]College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100022, China

通讯作者信息：

电子邮件地址：

jindongyue@sohu.com

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