The design of 3.6GHz-4.2GHz low noise amplifier - 文章详情页

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A　two-stage　broadband　low　noise　amplifier　(LNA)　was　designed.　The　LNA　was　implemented　on　a　Teflon　substrate　using　GaAs　FET　ATF-10136　and　PHEMT　ATF-34143　with　micro-strip　circuit　technology.　This　LNA　resulted　in　a　noise　figure　of　1.1dB,　and　21dB　gain　over　3.6　to　4.2　GHz　range.　The　input　and　output　VSWR　are　all　less　than　2.8.　The　computer　simulated　results　were　coincident　with　that　of　the　test.　©　2007　IEEE.

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Broadband amplifiers Gallium arsenide III-V semiconductors Low noise amplifiers Noise figure

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[ 1 ] [Yang, Wei-Ming]School of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
[ 2 ] [He, Li-Ping]School of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
[ 3 ] [Yang, Bin]School of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
[ 4 ] [Xie, Wan-Bo]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 5 ] [Shi, Chen]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 6 ] [Chen, Jian-Xin]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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