SPICE model of SiGe HBT with high resistivity substrate and its amplifier design - 文章详情页

作者：

Yang, Wei-Ming (Yang, Wei-Ming.) | Chen, Jian-Xin (Chen, Jian-Xin.) | Shi, Chen (Shi, Chen.) | Liu, Su-Juan (Liu, Su-Juan.)

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EI Scopus

摘要：

The　SPICE　model　parameters　of　SiGe　HBT　with　high　resistivity　substrate　is　extracted.　Compared　results　between　measured　and　simulated　data　verify　that　this　model　is　suitable　for　SiGe　HBT　DC　and　AC　small-signal　characterizations＇　representation.　Using　these　extracted　SPICE　parameters,　a　two-stage　direct-coupled　amplifier　has　been　designed　and　implemented　on　a　Teflon　substrate　PCB.　The　simulated　results　are　closed　to　that　of　test.

关键词：

Direct coupled amplifiers Electric conductivity Heterojunction bipolar transistors Mathematical models Polytetrafluoroethylenes Signal detection Silicon compounds SPICE

作者机构：

[ 1 ] [Yang, Wei-Ming]School of Physics and Electronics Technology, Hubei University, Wuhan 430062, China
[ 2 ] [Chen, Jian-Xin]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 3 ] [Shi, Chen]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China
[ 4 ] [Liu, Su-Juan]Beijing Optoelectronics Technology Laboratory, Beijing University of Technology, Beijing 100022, China

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ywmwy@sina.com

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