We　have　constructed　a　hot-wire-assisted　ECR-CVD　system　to　prepare　a-Si:H　and　μc-Si:H　films.　The　effect　of　hot　wire　(HW)　temperature　on　crystallization　of　a-Si:H　films　is　studied　in　the　films　prepared　by　this　system.　At　low　HW　temperature,　about　20　at.%　hydrogen　is　included　in　the　film.　With　increasing　the　HW　temperature,　the　contents　of　the　total　hydrogen,　SiH2　and　SiH　decrease,　and　the　microcrystalline　phase　appears.　It　is　found　from　the　area　of　the　TO　peak　of　the　Raman　scattering　spectra　that　the　volume　fraction　of　the　crystalline　phase　increases　with　increasing　the　HW　temperature.　The　crystalline　peak　has　a　tendency　to　shift　toward　the　higher　wavenumber　with　increasing　the　HW　temperature,　suggesting　that　the　grain　size　increases　with　increasing　the　HW　temperature.　©　2006　Materials　Research　Society.