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作者:

Zhang, Wan-Rong (Zhang, Wan-Rong.) (学者:张万荣) | Jin, Dong-Yue (Jin, Dong-Yue.) | Yang, Jing-Wei (Yang, Jing-Wei.) | He, Li-Jian (He, Li-Jian.) | Sha, Yong-Ping (Sha, Yong-Ping.) | Wang, Yang (Wang, Yang.) | Zhang, Wei (Zhang, Wei.)

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EI Scopus

摘要:

For power bipolar transistors, the emitter-ballasting-resistor is usually used to improve the thermal stability. However, the ballasting-resistors degrade the output power, power gain, power-added-efficiency (PAE) of the transistor. In this paper, the thermal stability can be improved substantially by adjusting either the spacing or length of the emitter fingers without using ballasting resistors. The temperature rise at the device center of the space-adjusted HBT is suppressed by reducing heat flow from adjacent fingers, and that of the length-adjusted HBT is suppressed by reducing heat generation in the region. © 2006 IEEE.

关键词:

Silicon compounds Resistors Logic design Heterojunction bipolar transistors

作者机构:

  • [ 1 ] [Zhang, Wan-Rong]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 2 ] [Jin, Dong-Yue]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 3 ] [Yang, Jing-Wei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 4 ] [He, Li-Jian]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 5 ] [Sha, Yong-Ping]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 6 ] [Wang, Yang]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China
  • [ 7 ] [Zhang, Wei]School of Electronic Information and Control Engineering, Beijing University of Technology, Beijing, 100022, China

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年份: 2006

页码: 221-223

语种: 英文

被引次数:

WoS核心集被引频次: 0

SCOPUS被引频次: 8

ESI高被引论文在榜: 0 展开所有

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